A variable probe pitch micro-Hall effect method

• Maria-Louise Witthøft,
• Frederik W. Østerberg,
• Janusz Bogdanowicz,
• Rong Lin,
• Henrik H. Henrichsen,
• Ole Hansen and
• Dirch H. Petersen

Beilstein J. Nanotechnol. 2018, 9, 2032–2039, doi:10.3762/bjnano.9.192

• MHE measurement itself is performed simply by placing a micro four-point probe (M4PP) in parallel and close proximity to an insulating boundary, with an orthogonal magnetic field applied. Then the measured resistance will have three contributions: a drift term, a Hall effect term and a magnetoresitive

Electrical characterization of single nanometer-wide Si fins in dense arrays

• Steven Folkersma,
• Janusz Bogdanowicz,
• Andreas Schulze,
• Paola Favia,
• Dirch H. Petersen,
• Ole Hansen,
• Henrik H. Henrichsen,
• Peter F. Nielsen,
• Lior Shiv and
• Wilfried Vandervorst

Beilstein J. Nanotechnol. 2018, 9, 1863–1867, doi:10.3762/bjnano.9.178

• micro four-point probe (μ4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling the electrical contact formation process, the electrical measurement can be confined to one individual fin although the used

• the technique, this opens the prospect for the use of μ4PP in electrical critical dimension metrology. Keywords: critical dimension metrology; electrical characterization; finFET; micro four-point probe; sheet resistance; Introduction The transition from planar to three-dimensional transistor

• architectures such as the fin field-effect transistor (finFET) [1] has raised the need for measuring the electrical properties of nanometer-wide conducting features [2]. Recently, it has been shown that the micro four-point probe (μ4pp) technique, which is commonly used for sheet resistance measurements on